Equipment for rapid heat treatment, thermal oxidation treatment, and high-temperature annealing
The rapid annealing furnace uses a halogen infrared lamp as the heat source and rapidly heats the wafer or material to 300℃-1200℃ through a very fast heating rate, thereby eliminating some defects in the wafer or material and improving product performance.
The rapid annealing furnace adopts an advanced microcomputer control system, uses PID closed-loop temperature control, can achieve extremely high temperature control accuracy and temperature uniformity, and can be configured with a vacuum chamber, and can also be configured with multiple gases according to the user's process requirements.